高难度M59BW102芯片全线解密成功

深圳鹏芯集成电路在IC解密研究中成功破解了M59BW102典型芯片型号，针对该芯片，我们解密周期短、价格低、可靠性强。这里，我们将针对M59BW102芯片的主要技术特征做简单介绍，供大家参考借鉴。
DESCRIPTION
The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis us-
ing only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.The device can be programmed and erased over 100,000 cycles.Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming and Chip Erase are written to the device in cycles of commands to a Command Interface using stan
dard microprocessor write timings. The M59BW102 features an interleaved access modality which allows extremely fast access time.The device is offered in TSOP40 (10 x 14mm)package.
·2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
·SEQUENTIAL CYCLE TIME: 25ns
·RANDOM ACCESS TIME
·PROGRAMMING TIME: 10μs typical
·INTERLEAVED ACCESS TIME: 16ns
·CONTINUOUS MEMORY INTERLEAVING
– Unlimited Linear Access Data Output
·PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Word-by-Word
– Status Register bits
·LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
·100,000 PROGRAM/ERASE CYCLES
·20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
·ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: C1h
以上主要性能特征介绍仅供参考。如果您有其他芯片解密需求，欢迎来电来访咨询洽谈。

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